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Publications

Book Chapters

1.     S. Chowdhury, Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices: Chapter on Status and perspectives of vertical GaN power devices, WILEY-VCH, Edited by F. Roccaforte, to be published by July 2020.

2.     D.Ji, J.Chun and S. Chowdhury, Handbook of GaN Semiconductor Materials and Devices:  Chapter on Vertical device architecture, Springer 2019, Edited by M. Meneghini, G. Meneghesso, E. Zanoni (under proof reading) to be published by June 2020

3.     S. Chowdhury, Widebandgap Semiconductor Power Devices: Chapter 6: GaN-on-GaN Power device Design and fabrication, Woodhead Publishing, 2018, Edited by: J. Baliga,

4.     S. Chowdhury and Dong Ji, Gallium Nitride enabled High Frequency and High Efficiency Power Conversion, Springer, 2018, Chapter 3: Vertical GaN Transistors for Power Electronics, Edited by: M. Meneghini, G. Meneghesso, E. Zanoni

5.     S. Chowdhury, Handbook of GaN Semiconductor Materials and Devices. Boca Raton: CRC Press, 2018 Chapter 10: Power Conversion and the Role of GaN

Edited By:  Wengang (Wayne) Bi, Haochung (Henry) Kuo, Peicheng Ku, Bo Shen

6.     S. Chowdhury, Power GaN Devices: materials applications and reliability, Springer, 2016 Chapter 5: Vertical Gallium Nitride Technology, Pages 101-121, Edited by M. Meneghini, G. Meneghesso, E. Zanoni

Selected Journal Papers (Peer-reviewed) –(with active hyperlinks)

(Students are named first, faculty are named last, final name is the supervisor of first author)

7.     Ricardo Peterson, Mohamadali Malakoutian, Xiaoqing Xu, Caitlin Chapin, Srabanti Chowdhury, Debbie Senesky, “Analysis of the Mobility-Limiting Mechanisms of the Two-Dimensional Hole Gas on Hydrogen-Terminated Diamond”, accepted for Phys Rev. B

8.     M. Malakoutian, M. Benipal, F. A. Koeck, R. J. Nemanich and S. Chowdhury, "Schottky Barrier Height Analysis of Diamond SPIND Using High Temperature Operation up to 873 K," in IEEE Journal of the Electron Devices Society, doi: 10.1109/JEDS.2020.2999269.

9.     Dong Ji, Burcu Ercan, Garrett Benson, AKM Newaz, and Srabanti Chowdhury, “60 A/W High Voltage GaN Avalanche Photodiode Demonstrating Robust Avalanche and High Gain up to 525K”, Appl. Phys. Lett. 116, 211102 (2020); https://doi.org/10.1063/1.5140005

10.  K. Zeng and S. Chowdhury, "Designing Beveled Edge Termination in GaN Vertical p-i-n Diode-Bevel Angle, Doping, and Passivation," in IEEE Transactions on Electron Devices (via early access)

11.  D. Ji, S. Li, B. Ercan, C. Ren, and S. Chowdhury, “Design and fabrication of Ion-Implanted Moat etch termination resulting in 0.7 mΩ·cm2/1500 V GaN diodes”, IEEE Electron Device Lett., vol. 41, no. 2, pp. 264–267, Feb. 2020.

12.  J. Chun, S. Li, M. Malakoutian, D. Ji, and S. Chowdhury, “A study on the first‐derivative output properties of GaN static induction transistor with submicrometer fin width”, Phys. Status Solidi B, vol. 257, no. 2, pp. 1900545, Feb. 2020. [Front Cover]

13.  D. Ji, B. Ercan, and S. Chowdhury, “Experimental determination of velocity-field characteristic of holes in GaN”, IEEE Electron Device Lett., vol. 41, no. 1, pp. 23–25, Jan. 2020.

14.  M.Malakoutian, M. A. Laurent, and S. Chowdhury, “A study on the growth window of polycrystalline diamond on Si3N4-coated N-polar GaN”, Crystals, vol. 9, no. 10, pp. 498, Oct. 2019

15.  M. Malakoutian, M. Laurent, and S.Chowdhury, “A Study on the Growth Window of Polycrystalline Diamond on Si3N4-coated N-Polar GaN”, Crystals 2019, vol 9, no.10, p. 498, Sep. 2019.

16.   [Invited] D. Ji and S. Chowdhury, “On the progress made in GaN vertical device technology, Special Issue on Wide Band Gap Semiconductor Electronics and Devices” International Journal of High-Speed Electronics and System, Vol. 28, No. 01n02, 1940010 (2019)  

17.  D. Ji, B. Ercan, and S. Chowdhury, “Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures,” Applied Physics Letters, vol. 115, no. 7, p. 073503, Aug. 2019. [Editor’s pick]

18.  S. Rajabi, S. Mandal, M.A Laurent, H.Li, S.Keller and S. Chowdhury  et al., “A Demonstration of Nitrogen Polar Gallium Nitride Current Aperture Vertical Electron Transistor,” IEEE Electron Device Letters, vol. 40, no. 6, pp. 885–888, 2019.

19.  J. Chun, W. Li, A. Agarwal, and S. Chowdhury, “Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub-Micrometer Fin Width,” Advanced Electronic Materials, vol. 5, no. 1, p. 1800689, 2019.

20.  J M. Holmes, M. Dutta, F A.Koeck, M. Benipal, R. Hathwar, J Brown, B. Fox, H. Johnson, A. Zaniewski, R. Alarcon, S. Chowdhury, S.M. Goodnick, R.J. Nemanich, “Neutralizing the polarization effect of diamond diode detectors using periodic forward bias pulses,” Diamond and Related Materials, vol. 94, pp. 162–165, 2019

21.  J M. Holmes, M. Dutta, F A.Koeck, M. Benipal, R. Hathwar, J Brown, B. Fox, H. Johnson, M .Malakoutian, M.Saremi, A. Zaniewski, R. Alarcon, S. Chowdhury, S.M. Goodnick, R.J. Nemanich., “A 4.5 μm PIN diamond diode for detecting slow neutrons,” Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 903, pp. 297–301, 2018

22.  Z. Xu, S. Mandal, J. Gao, H Surdi, W Li, Y Yamaoka, G Piao, T. Tabuchi, H.Li, K.Matsumoto, and S.Chowdhury ., “Discrete-pulsed current time method to estimate channel thermal resistance of GaN-based power devices,” IEEE Transactions on Electron Devices, vol. 65, no. 12, pp. 5301–5306, 2018

23.  D. Ji, W Li, Al Agarwal, S H Chan, J. Haller, D. Bisi, M. Labrecque, C. Gupta, B. Cruse, R.K Lal, S. Keller, UK. Mishra, and S. Chowdhury, “Improved Dynamic R ON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch,” IEEE Electron Device Letters, vol. 39, no. 7, pp. 1030–1033, 2018

24.  D. Ji, W. Li and S. Chowdhury, "A Study on the Impact of Channel Mobility on Switching Performance of Vertical GaN MOSFETs," in IEEE Transactions on Electron Devices, vol. 65, no. 10, pp. 4271-4275, Oct. 2018.

25.  D. Ji, A. Agarwal, H. Li, W. Li, S. Keller, and S. Chowdhury, “880 V/2.7 mWcm2 MIS Gate Trench CAVET on Bulk GaN Substrates,” IEEE Electron Device Letters, vol. 39, no. 6, pp. 863–865, Jun. 2018.

26.  J. Gao, A. Kaya, R. V. Chopdekar, Z. Xu, Y. Takamura, M. S. Saif, and S. Chowdhury, "A study of Temperature dependent current voltage (I-V-T) characteristics in Ni/sol-gel β-Ga2O3/n-GaN structure," J Mater Sci: Mater Electron vol. 29, issue 13 pp. 11265–11270. 2018

27.  S. Mandal, M. Kanathila, C. Pynn, W. Li, J. Gao, T. Margalith, M. Laurent, S. Chowdhury, “Observation and discussion of avalanche electroluminescence in GaN p-n diodes offering a breakdown electric field of 3 MV cm-1,” Semicond. Sci. Technol., vol. 33, no. 6, p. 065013, 2018.

28.  D. Ji, C. Gupta, A. Agarwal, S. H. Chan, C. Lund, W. Li, S. Keller, U. K. Mishra, and S. Chowdhury., “Large-AreaIn-SituOxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET),” IEEE Electron Device Letters, vol. 39, no. 5, pp. 711–714, 2018.

29.  M. Dutta, M., S. Mandal, R. Hathwar, A.M. Fischer, F.A.M. Koeck, R.J. Nemanich, S.M. Goodnick, and S. Chowdhury. “Determination of Minority Carrier Lifetime of Holes in Diamond PIN Diodes Using Reverse Recovery Method.” IEEE Electron Device Lett., 2018. https://doi.org/10.1109/LED.2018.2804978.

30.  J. Gao, M. Hao, W. Li, Z. Xu, S. Mandal, R. Nemanich, and S. Chowdhury, “Al2O3 Insertion Layer for Improved PEALD SiO2 /AlGaN Interfaces”, Phys. Status Solidi Appl. Mater. Sci., p. 1700498, 2018

31.  J. Y. Tsao, S. Chowdhury, M. A. Hollis, D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar, S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, et al., “Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges”,  Adv. Electron. Mater., vol. 4, no. 1, 1600501, 2018

32.  D. Ji, A. Agarwal, W. Li, S. Keller, and S. Chowdhury, “Demonstration of GaN Current Aperture Vertical Electron Transistors With Aperture Region Formed by Ion Implantation”, IEEE Trans. Electron Devices, pp. 483-487, 2018.

33.  S. Zhao, J. Gao, S. Wang, H. Xie, F. A. Ponce, S. Goodnick, and S. Chowdhury, “Stability of alloyed and nonalloyed ohmic contacts to n-type GaN at high temperature in air”, Jpn. J. Appl. Phys., vol. 56, no. 12, pp. 126502, 2017.

34.  W. Li, D. Ji, R. Tanaka, S. Mandal, M. Laurent, and S. Chowdhury, “Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process”, IEEE J. Electron Devices Soc., vol. 5, no. 6, pp 485-490, 2017.

35.  M. Dutta, F. A. M. Koeck, W. Li, R. J. Nemanich, and S. Chowdhury, “High Voltage Diodes in Diamond Using (100)-A nd (111)-Substrates”,  IEEE Electron Device Lett., vol. 38, no. 5, pp. 600-603, 2017.

36.  D. Ji, M. A. Laurent, A. Agarwal, W. Li, S. Mandal, S. Keller, and S. Chowdhury, “Normally off Trench CAVET with Active Mg-Doped GaN as Current Blocking Layer”, IEEE Trans. Electron Devices, vol. 64, no. 3, pp 805-808, 2017.

37.  Y. Yang, F. A. Koeck, M. Dutta, X. Wang, S. Chowdhury, and R. J. Nemanich, “Al2O3 dielectric layers on H-terminated diamond: Controlling surface conductivity” J. Appl. Phys., vol. 122, no. 15, pp.155304, 2017.

38.  M. Saremi, R. Hathwar, M. Dutta, F. A. M. Koeck, R. J. Nemanich, S. Chowdhury, and S. M. Goodnick, “Analysis of the reverse I-V characteristics of diamond-based PIN diodes”, Appl. Phys. Lett., vol. 111, no. 4, pp. 043507, 2017.

39.  S. Mandal, A. Agarwal, E. Ahmadi, K. M. Bhat, D. Ji, M. A. Laurent, S. Keller, and S. Chowdhury, “Dispersion free 450-V p GaN-gated CAVETs with Mg-ion implanted blocking layer”, IEEE Electron Device Lett., vol. 38, no. 7, pp. 933-936, 2017.

40.  A. Kaya, H. Mao, J. Gao, R. V. Chopdekar, Y. Takamura, S. Chowdhury, and M. S. Islam, “An Investigation of Electrical and Dielectric Parameters of Sol-Gel Process Enabled β-Ga2O3 as a Gate Dielectric Material”, IEEE Trans. Electron Devices, vol. 64, no. 5,  pp. 2047-2053, 2017.

41.  R. Soligo, F. Sabatti, S. Chowdhury, and M. Saraniti, “Momentum Space Engineering of GaN HETs for RF Applications Through Full-Band Monte Carlo Simulations”, IEEE Trans. Electron Devices, vol. 64, no. 11, pp.4442-4449, 2017.

42.  C. Gupta, D. Ji, S. H. Chan, A. Agarwal, W. Leach, S. Keller, S. Chowdhury, and U. K. Mishra, “Impact of Trench Dimensions on the Device Performance of GaN Vertical Trench MOSFETs”, IEEE Electron Device Lett., vol. 38, no. 11, pp.1559-1562, 2017.

43.  D. Ji, Y. Yue, J. Gao, and S. Chowdhury, “Dynamic Modeling and Power Loss Analysis of High-Frequency Power Switches Based on GaN CAVET”,  IEEE Trans. Electron Devices, vol. 63, no. 10, pp. 4011-4017, 2016.

44.  S. Zhao, H. McFavilen, S. Wang, F. A. Ponce, C. Arena, S. Goodnick, and S. Chowdhury, “Temperature Dependence and High-Temperature Stability of the Annealed Ni/Au Ohmic Contact to p-Type GaN in Air”, J. Electron. Mater., vol. 45, no. 4, pp. 2087-2091, 2016.

45.  R. Hathwar, M. Dutta, F. A. M. Koeck, R. J. Nemanich, S. Chowdhury, and S. M. Goodnick, “Temperature dependent simulation of diamond depleted Schottky PIN diodes”, J. Appl. Phys., vol. 119, no. 22, pp. 225703, 2016.

46.  M. Dutta, F. A. M. Koeck, R. Hathwar, S. M. Goodnick, R. J. Nemanich, and S. Chowdhury, “Demonstration of Diamond-Based Schottky p-i-n Diode with Blocking Voltage >500 V”, IEEE Electron Device Lett., vol. 37, no. 9,  pp.1170-1173, 2016.

47.  W. Li and S. Chowdhury, “Design and fabrication of a 1.2 kV GaN-based MOS vertical transistor for single chip normally off operation”, Phys. Status Solidi Appl. Mater. Sci., vol. 213, no. 10, pp. 2714-2720, 2016.

48.  R. Soligo, S. Chowdhury, G. Gupta, U. Mishra, and M. Saraniti, "The Role of the Base Stack on the AC Performance of GaN Hot Electron Transistor", IEEE Electron Device Lett., vol. 36, no. 7, pp. 669-671, 2015.

49.  [Invited] S. Chowdhury, "Low loss power conversion with Gallium nitride based devices" ECS Transactions, vol. 66, no. 1, pp. 67-77, 2015

50.   [Invited] S. Chowdhury, "Gallium nitride based power switches for next generation of power conversion", Phys. Status Solidi Appl. Mater. Sci., vol. 212, no. 5, pp. 1066-1074, 2015 * Special edition celebrating Nobel Prize in Physics for physica status solidi authors Isamu Akasaki, Hiroshi Amano and Shuji Nakamura

51.  D. Ji and S. Chowdhury, "Design of 1.2 kV Power Switches with Low RON Using GaN-Based Vertical JFET", IEEE Trans. Electron Devices, vol. 62, no. 8, pp. 2571-2578, 2015.

52.  R. Yeluri, J. Lu, C. A. Hurni, D. A. Browne, S. Chowdhury, S. Keller, J. S. Speck, and U. K. Mishra, "Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction", Appl. Phys. Lett., vol. 106, no. 18, pp. 183502, 2015.

53.  [Invited] S. Chowdhury and U. K. Mishra, "Lateral and vertical transistors using the Algan/GAN Heterostructure", IEEE Trans. Electron Devices, vol. 60, no. 10, pp.3060-3066, 2013.

54.  [Invited] S. Chowdhury, B. L. Swenson, M. H. Wong, and U. K. Mishra, "Current status and scope of gallium nitride-based vertical transistors for high-power electronics application", Semicond. Sci. Technol., vol. 28, no. 7,  pp. 074014, 2013. Editorial pick for 2013.

55.  S. Chowdhury, M. H. Wong, B. L. Swenson, and U. K. Mishra, "CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion", IEEE Electron Device Lett., vol. 33, no. 1, pp. 41-43, 2012.

56.  S. Keller, Y. Dora, S. Chowdhury, F. Wu, X. Chen, S. P. Denbaars, J. S. Speck, and U. K. Mishra, "Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon", Phys. Status Solidi C, vol. 8, no. 8, pp. 2086-2088, 2011.

57.  S. Chowdhury, B. L. Swenson, J. Lu, and U. K. Mishra, "Use of sub-nanometer thick AlN to arrest diffusion of ion-implanted Mg into regrown AlGaN/GaN layers", Jpn. J. Appl. Phys., vol. 50, no. 10R, pp. 101002, 2011.

58.  L. Gordon, M.-S. Miao, S. Chowdhury, M. Higashiwaki, U. K. Mishra, and C. G. Van De Walle, "Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions", J. Phys. D. Appl. Phys., vol. 43, no. 50, pp. 505501, 2010.

59.  M. Higashiwaki, S. Chowdhury, B. L. Swenson, and U. K. Mishra, "Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures", Appl. Phys. Lett., vol. 97, no. 22,  pp. 222104, 2010.

60.  S. Keller, Y. Dora, F. Wu, X. Chen, S. Chowdury, S. P. Denbaars, J. S. Speck, and U. K. Mishra, "Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition", Appl. Phys. Lett., vol. 97, no. 14, pp.142109, 2010.

61.  M. Higashiwaki, S. Chowdhury, M.-S. Miao, B. L. Swenson, C. G. Van De Walle, and U. K. Mishra, "Distribution of donor states on etched surface of AlGaN/GaN heterostructures," J. Appl. Phys, vol. 108, no. 6, pp. 063719, 2010.

62.  S. Chowdhury, B. L. Swenson, and U. K. Mishra, "Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer", IEEE Electron Device Lett., vol. 29, no. 6, pp. 543-545, 2008. (citations 124)

Proceedings Papers (Peer-reviewed) –(with active hyperlinks)

63.  M. Ruzzarin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Dong Ji, Wenwen Li, et al. "Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs)." In 2019 IEEE International Reliability Physics Symposium (IRPS), 1-5. IEEE, 2019.

64.  S. Mandal, A. Agarwal, E. Ahmadi, K. Mahadeva Bhat, M. A. Laurent, S. Keller, and S. Chowdhury, "Comparative study of CAVET with dielectric and p-GaN gate and Mg ion-implanted current blocking layer", Proc. SPIE 10381, Wide Bandgap Power Devices and Applications II, 1038108, 2017

65.  J. Gao, W. Li, S. Mandal, and S. Chowdhury, "A study of the effect of surface pretreatment on atomic layer deposited Al2O3interface with GaN", Proc. SPIE 10381, Wide Bandgap Power Devices and Applications II, 1038103, 2017.

66.  D. Ji, W. Li, and S. Chowdhury, "Potential of GaN vertical JFETs presented through a comprehensive discussion of dynamic performance compared to SiC JFETs",  4th IEEE Workshop on Wide Bandgap Power Devices and Applications, 2016.

67.  A. Kaya, J. Gao, H. Cansizoglu, A. S. Mayet, H. H. Mamtaz, S. Ghandiparsi, S. Chowdhury, and M. S. Islam, "Ga2O3 as both gate dielectric and surface passivation via sol-gel method at room ambient", Proc. SPIE 9957, Wide Bandgap Power Devices and Applications, 995709, 2016 . doi 10.1117/12.2239177

68.  D. Ji and S. Chowdhury, "A discussion on the DC and switching performance of a gallium nitride CAVET for 1.2kV application", 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 2015.

Conference Presentations

Plenaries

1.     Advances in Advances in Wide Bandgap, High Power Density Semiconductor Devices, IEEE IVEC 2020, Monterey, US, 2020- Postponed to 2021

2.     GaN devices for power electronics and communication, GaN Marathon, 2020, Padova, US 2020, Postponed to April 2021

Invited

3.     “From device fundamentals to performance for power applications with Gallium Nitride”, GoMac Tech April 2020, San Diego, CA, USA (postponed due to COVID-19)

4.     “GaN devices for power conversion and communication”, CODEC, Kolkata, India, Dec 2019

5.     “GaN vertical devices and relevance of fundamental studies” IWPSD, Kolkata, India, Dec 2019

6.     “A discussion on dielectrics for GaN devices”, 2019 NNCI ALD/MOCVD/MBE Symposium, Harvard, USA, Oct 2019

7.     “Processing of GaN Vertical Devices: Static Induction Transistors”, Compound Semiconductor Week, Nara, Japan, May 2019.

8.     GaN Vertcial devices for power conversion, ICEE, 2018, Bangalore, India

9.     “GaN vertical device technology and its future”, AVS 65th International Symposium & Exhibition, Long Beach, California, USA, October 2018

10.  “Progress in GaN-based vertical device development for high power applications”, Government Microcircuit Applications and critical technology conference (GOMACTECH), Miami Florida, USA, March 2018

11.  “Vertical GaN transistors for Power switching application”, ISPlasma, Nagoya, Japan, March 2018

12.  “A review of GaN’s role in emerging electronics (Power electronics)”, XIX International Workshop on The Physics of Semiconductor Devices (IWPSD), Delhi, India December 2017

13.  “A Discussion on the Latest Performance of GaN–Based Vertical Devices and the Paths Forward”, 232nd Electro Chemical Society (ECS) Meeting, Washington DC, USA, October 2017.

14.  “Recent achievements and pending challenges in Gallium Nitride vertical device development”, International Conference on Solid State Devices and Materials (SSDM), Sendai, Japan, September 2017

15.  “Newly evolving wide bandgap devices for power electronics (Bulk GaN and Diamond)”, Topical Workshop on Heterostructure Microelectronics (TWHM), Kagoshima, Japan, August 2017

16.  “Diamond based transistors and diodes for high power application”, Workshop on Ultra-Precision Processing of Widebandgap Semiconductors, WUPP, Monterey, California, November 2017

17.  “Role of Wide Bandgap Semiconductors in Next-Generation Power Converters”, COMPASS, Half moon Bay, California, USA, October 2017

18.  “A Roadmap of Next-Generation Power Devices with Gallium Nitride”, SURGE Silicon Valley (Silvaco), Santa Clara, California, USA, September 2017

19.  “On n-type diamond devices”, International Symposium on Compound Semiconductors (ISCS), Berlin, Germany, May 2017

20.  “A Roadmap beyond Si Power Electronics Enabled by Wide Bandgap Materials”, Material Research Society Meeting, Boston, Massachusetts, USA, November 2016

21.  “Role of wide bandgap semiconductors in next generation power converters”, SPIE, Optics + Photonics, San Diego, California, USA, August 2016

22.  “Electronics for harsh environment sensing: possibilities with GaN and diamond, SPIE Defense + Commercial sensing”, Baltimore, Maryland, USA, March 2016

23.  “Wide bandgap and ultra-wide bandgap devices for Power conversion”, Material Research Outreach Program, Santa Barbara, California, USA, February 2016

24.  “Power Conversion with Gallium Nitride Devices”, SPIE Photonics West, San Francisco, California, USA, January 2016

25.   “Recent developments in power electronic devices using GaN and Diamond”, Electro Chemical Society (ECS) Symposium, Phoenix, Arizona, USA, October 2015

26.  "Low Loss Power Conversion Enabled by Gallium Nitride Based Devices", 227th Electro Chemical Society (ECS) meeting, Chicago, Illinois, USA, May 2015

27.  “Gallium Nitride and other emerging semiconductors for next generation power conversion” Invited SSEL seminar at University of Michigan, Ann Arbor, Michigan, USA, November 2014

28.  “GaN based power electronic devices for next generation power conversion”, The International Workshop on Nitride Semiconductors (IWN), Wroclaw, Poland, August 2014

29.  “GaN based devices offers efficient power conversion for the next generation automotive application”, IEEE Lecture series – Transportation Electrification, ASU, Tempe, Arizona, USA April 2014

30.  “GaN switches offer the next generation power conversion solution”, International Semiconductor Device Research Symposium (ISDRS), College Park, Maryland, USA, December 2013

31.  “Current Status of GaN-based Power Electronic Devices and their Fabrication Challenges”, Plasma-Therm Symposium, Stanford, California, USA, September 2013

32.  “Lateral and Vertical Power Devices in Gallium Nitride”, Topical Workshop on Heterostructure Microelectronics (TWHM), Gifu, Japan, 2011

Tutorial and Tech talks (Invited)

33.  Tutorial on Widebandgap materials and devices, ISPLASMA, Nagoya, Japan, 2020

34.  Tutorial on Widebandgap materials for power conversion and communication, SSDM, Nagoya, Japan, 2019

35.  Tech talk: New frontiers of electronics with Wide-bandgap semiconductors at Cirrus Logic, Texas, US, 2019

36.  Invited speaker at the All hands meeting, office of Naval Academy, US, 2019

37.  Tutorial on power electronics at ESSDERC/ESSCIRC Conference, Lausanne, Switzerland, 2016

Conference Presentations (Refereed)

38.  C.Ren, …., S. Chowdhury "Hydrogen-terminated diamond FET and GaN HEMT delivering CMOS inverter operation at high-temperature (accepted) Device Research Conference 2020 (virtual)

39.  D.Ji….. S.Chowdhury “Demonstration of GaN Impact Ionization Avalanche Transit-Time (IMPATT) Diode”, (accepted) ) Device Research Conference 2020 (virtual)

40.  D.Ji…. S.Chowdhury, “Robust Avalanche in GaN Leading to Record Performance in Avalanche Photodiode”, IEEE International Reliability Physics Symposium 2020 (virtual)

41.  M. Malakoutian, M. A Laurent, S.Chowdhury, “The Impact of Plasma Temperature on the Stress and Quality Factor of Over-Grown Polycrystalline Diamond on GaN”, Materials Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, Nov 2019

42.  Dong Ji, Burcu Ercan, and Srabanti Chowdhury, “Achieving a Record High p-n Junction Breakdown Electric Field of 3.9 MV/cm in GaN Using Ion-Compensated Moat Etch Termination”, International conference on Nitride Semiconductors (ICNS), Seattle, Washington. USA, July 2019

  1.  Dong Ji, Burcu Ercan, and Srabanti Chowdhury, “Experimental Determination of Hole Impact Ionization Coefficient and Saturation Velocity in GaN”, International Symposium on Compound Semiconductors (ISCS), Nara, Japan, 2019

44.  Ruzzarin, Maria, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Dong Ji, Wenwen Li, et al. “Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs).” In 2019 IEEE International Reliability Physics Symposium (IRPS), 1–5. IEEE, 2019.

45.  M. Malakoutian, M.A Laurent, S.Chowdhury, Plasma Density Impact on the Polycrystalline Diamond Growth on GaN”, Electronics Materials Conference (EMC), , Ann Arbor, Michigan , USA, June 2019

46.  J. Chun and Srabanti Chowdhury, “Current Scaling in Single and Multiple Fin Static Induction Transistors with Sub-Micron Fin Width, Device Research Conference (DRC) , Ann Arbor, Michigan , USA, June 2019

47.  J. Gao, Z. Xu, S. Li, and S. Chowdhury, "A study of temperature dependent current-voltage (I-V-T) characteristics in Ni/(-201) β-Ga2O3 Schottky diode," In Proceedings SPIE, Wide Bandgap Power Devices and Applications, San Diego, California, USA, August 2018

48.  M. Laurent, S.Keller, S.Chowdhury and U.Mishra, “Comprehensive Analysis of Surface Morphology and Growth Mode of AlInGaN Epitaxial Films”, International Symposium on Compound Semiconductors (ISCS), Boston, Massachusetts, USA, May, 2018

49.  R. Nemanich, F.Koeck, M. Dutta, R. Hathwar, M Saremi, X Wang, B. Eller, M Benipal, S Chowdhury, S Goodnick,, Diamond Epitaxy for High Power and High Temperature Electronics, MRS Fall, Boston, Massachusetts, USA, November 2017

50.  Y.Yang, F. Koeck, X Wang, H.Surdi, S.Chowdhury and R. Nemanich, Surface Transfer Doping of Diamond/MoO3 with an Al2O3 Interface Layer, MRS Fall, Boston, Massachusetts, USA, November 2017

51.  Raghuraj Hathwar, Maitreya Dutta, Franz A. M. Koeck, Mehdi Saremi, Srabanti Chowdhury, and Stephen M. Goodnick, Robert J. Nemanich, “V2 Diode Current Density Indicating a High Current Regime for Schottky-PIN Diamond Diodes”, Hasselt Diamond workshop XXII, Hasselt, Belgium, March 2017

52.  Dong Ji, Wenwen Li and Srabanti Chowdhury, “Switching Performance Analysis of GaN OG-FET Using TCAD Device-Circuit-Integrated Model”, International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, Illinois, USA, May 2018

53.  D. Ji, Chirag Gupta, S. H. Chan, A. Agarwal, W. Li, S. Keller, U. K. Mishra and S. Chowdhury, “Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices”, International Electron Devices Meeting (IEDM), San Francisco, California, December 2017

54.  Saba Rajabi, Saptarshi Mandal, Haoran Li, Matthew A. Laurent, Stacia Keller, Srabanti Chowdhury, “III-nitride based N-polar current aperture vertical electron transistors”, SPIE (Optics+ Photonics), San Diego, California, August 2017

55.  Saptarshi Mandal, Anchal Agarwal, Elaheh Ahmadi, K. Mahadeva Bhat, Matthew A. Laurent, Stacia Keller, Srabanti Chowdhury, “Comparative study of CAVET with dielectric and p-GaN gate and Mg ion-implanted current blocking layer”, SPIE (Optics+ Photonics), San Diego, California, August 2017

56.  Jianyi Gao, Wenwen Li, Saptarshi Mandal, Srabanti Chowdhury, “A study of the effect of surface pretreatment on atomic layer deposited Al2O3 interface with GaN”, SPIE (Optics+ Photonics), San Diego, California, August 2017

57.  Mei Hao, Brianna Eller, Srabanti Chowdhury, and Robert J. Nemanich, “PEALD Ga2O3 as Dielectric Interlayer on GaN”, Atomic Layer Deposition/Etching (ALD/ALE 2017)    Denver, Colorado, July 2017

58.  Dong Ji , Chirag Gupta, Anchal Agarwal , Silvia H. Chan , Cory Lund , Wenwen Li , Matthew A. Laurent , Stacia Keller , Umesh K. Mishra , Srabanti Chowdhury, “First report of scaling a normally-off in-situ oxide, GaN interlayer based vertical trench MOSFET (OG-FET)”, Device Research Conference (DRC), South Bend, Indiana , June 2017.

59.  Jianyi Gao, Ahmet Kaya, Rajesh V. Chopdekar , Daniel M. Dryden , Yayoi Takamura , M. Saif Islam , Srabanti Chowdhury, “Characterization of β-Ga2O3 interface and conduction band offset with GaN using a Sol-gel process of deposition”, Device Research Conference (DRC) , South Bend, Indiana , June 2017.

60.  Harshad Surdi, Maitreya Dutta, Srabanti Chowdhury, Electronics Materials Conference (EMC), “Demonstration of H-Terminated Single Crystal Diamond Hole-Channel MESFET with ~40mA/mm and 121 kV/cm”, South Bend, Indiana, June 2017

61.  Mei Hao, Brianna S. Eller, Jialing Yang, Srabanti Chowdhury and Robert J. Nemanich, “Plasma Enhanced Atomic Layer Deposition of Ga2O3 Using Ga(acac)3”, MRS Spring Meeting, Phoenix, Arizona, USA, April 2016

62.  Jianyi Gao, Yuanzheng Yue, Mei Hao, Wenwen Li, Dong Ji, Robert Nemanich and Srabanti Chowdhury, “High Breakdown, Low Interface State PEALD Al2O3/SiO2 Gate Stack for AlGaN/GaN MOS-HEMT”, International Workshop on Nitride Semiconductors (IWN), Orlando, Florida, October 2016

63.  Dong Ji, Matthew A. Laurent, Anchal Agarwal, Stacia Keller, Umesh K. Mishra and Srabanti Chowdhury, “Demonstration of Normally off GaN Trench-CAVET for High Power Application”, International Workshop on Nitride Semiconductors (IWN), Orlando, Florida, October 2016

64.  Yuangzheng Yue, Jianyi Gao, Saptarshi Mandal, Shirong Zhao, Dong Ji, Wenwen Li and Srabanti Chowdhury, “GaN-on-Si Power HEMTs with Blocking Field >70V/μm”, International Workshop on Nitride Semiconductors (IWN), Orlando, Florida, October 2016.

65.  Saptarshi Mandal, Anchal Agarwal, Elaheh Ahmadi, Matthew Laurent, Stacia Keller, Mahadeva Bhat K, Wenwen Li, Dong Ji, Umesh K. Mishra and Srabanti Chowdhury, “pGaN Gate CAVET with Mg Ion-Implanted Current Blocking Layer Demonstrating a Blocking Voltage over 500V”, International Workshop on Nitride Semiconductors (IWN), Orlando, Florida, October 2016

66.  Wenwen Li, Ryo Tanaka, Saptarshi Mandal, Matthew Laurent and Srabanti Chowdhury, “Design and Fabrication of Self-Aligned GaN Static Induction Transistors”, International Workshop on Nitride Semiconductors (IWN), Orlando, Florida, October 2016

67.  Fetene M. Yigletu, Dong Ji and Srabanti Chowdhury, International Workshop on Nitride Semiconductors (IWN), “On the Compact Modeling of CAVETs for Circuit Simulation”, Orlando, Florida, October 2016

68.  Dong Ji, Wenwen Li and Srabanti Chowdhury, “Potential of GaN vertical JFETs presented through a comprehensive discussion of dynamic performance compared to SiC JFETs”, Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Fayetteville, Arkansas, USA, November 2016

69.  Maitreya Dutta, Franz Koeck, Raghuraj HathwaR, Stephen Goodnick, Robert J. Nemanich, and Srabanti Chowdhury, “Diamond Based Diodes for High Voltage and High Temperature Applications”, MRS Spring Meeting, Phoenix, Arizona, USA, April, 2016

70.  Franz A. Koeck, Maitreya Dutta, Srabanti Chowdhury, and Robert J. Nemanich, “Doped Diamond Homoepitaxy on (100) Substrates for High Power p-i-n Diodes”, MRS Spring Meeting, Phoenix, Arizona, USA, April, 2016

71.  Raghuraj Hathwar, Maitreya Dutta, Franz A. Koeck, Robert J. Nemanich, Srabanti Chowdhury, and Stephen Goodnick, “Simulation of Diamond PNP Bipolar Junction Transistors”, MRS Spring Meeting, Phoenix, Arizona, USA, April, 2016

72.  Mei Hao, Brianna S. Eller, Srabanti Chowdhury and Robert J. Nemanich, “Influence of Pre- and Post-treatment on Plasma-Enhanced Atomic Layer Deposited SiO2 and Al2O3 on GaN”, MRS Spring Meeting, Phoenix, Arizona, USA, April, 2016

73.   Dong Ji and Srabanti Chowdhury, IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA), “A discussion on the DC and switching performance of a gallium nitride CAVET for 1.2kV application,” Blacksburg, Virginia, USA, 2015

74.  Dong Ji and Srabanti Chowdhury, “A Comprehensive Study of the Design Space to Achieve 1.2kV GaN-based Vertical JFET with Low Ron”, International Symposium on Compound Semiconductors (ISCS), Santa Barbara, California, USA, 2015

75.  Wenwen Li and Srabanti Chowdhury, “Design of a 1.2kV GaN MOSVFET for Single Chip Normally-off Operation”, International Symposium on Compound Semiconductors (ISCS), Santa Barbara, California, USA, 2015

76.  Shirong Zhao, Heather McFavilen, Shuo Wang, Fernando Ponce, Chantal Arena, Stephen Goodnick and Srabanti Chowdhury, “High Temperature Contacts to p-GaN and n-GaN for Topping cell InGaN Photovoltaic Devices”, Electronic Materials Conference (EMC), Columbus, Ohio, USA, 2015

77.  Srabanti Chowdhury, “GaN-based vertical devices for power switching application”, WOCSEMMAD, Isle of Palms, South Carolina, USA, 2015

78.  Wenwen Li and Srabanti Chowdhury, “Design of a 1.2 kV GaN-based MOS vertical transistor for single chip normally-off operation”, WOCSEMMAD, Isle of Palms, South Carolina, USA, 2015”

79.  Maitreya Dutta, Franz A.M. Koeck, Raghuraj Hathwar, Saptarshi Mandal, Stephen M. Goodnick, Robert J. Nemanich, and Srabanti Chowdhury, “Development of Low-Resistance Contacts to Phosphorus Doped Diamond”, WOCSEMMAD, Isle of Palms, South Carolina, USA, 2015”

80.  Srabanti Chowdhury, Don Kebort, Jesus Magadia, Dietrich Graumann, Nick Fichtenbaum, Jim Honea, Yifeng Wu, Primit Parikh and Umesh K Mishra, “First demonstration of high performance 1kV AlGaN/GaN HEMTs on Si and their use in the drive of both an induction motor and a permanent magnet motor”, The International Workshop on Nitride Semiconductors (IWN), Sapporo Japan, 2012

  1. Masataka Higashiwaki, Srabanti Chowdhury, Brian L. Swenson and Umesh K. Mishra, “Study of Thermal Oxidation Effects on Surface Barrier Height of AlGaN/GaN Heterostructures”, The International Workshop on Nitride Semiconductors (IWN), Florida, USA, 2010

82.  Stacia Keller, Yuvaraj Dora, Srabanti Chowdhury, Feng Wu, Xu Chen, Steven P. DenBaars, James S. Speck, and Umesh K. Mishra, “Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon”, The International Workshop on Nitride Semiconductors (IWN), Florida, USA, 2010

  1. Srabanti Chowdhury, Man Hoi Wong, Brian L. Swenson and Umesh K. Mishra, “Dispersion-free AlGaN/GaN CAVET with low Ron achieved with plasma MBE regrown channel with Mg-ion-implanted current blocking layer”, Device Research Conference (DRC), South Bend, Indiana, USA, 2010
  2. Srabanti Chowdhury, Man Hoi Wong, Brian L. Swenson and Umesh K. Mishra, “Low on resistance AlGaN/GaN Current Aperture Vertical Electron Transistors achieved with MBE regrown channels to suppress Mg diffusion from Current Blocking Layers”, International Symposium on Compound Semiconductors (ISCS), Takamatsu, Japan, 2010
  3. Srabanti Chowdhury, Masataka Higashiwaki, Maosheng Miao, Brian L. Swenson, Chris G. Van de Walle, and Umesh K. Mishra, “Estimation of surface barrier height of etched AlGaN barrier in AlGaN/GaN heterostructures”, International Symposium on Compound Semiconductors (ISCS), Santa Barbara, USA, 2009
  4. Srabanti Chowdhury, Brian L. Swenson, Stacia Keller and Umesh K. Mishra, “Investigation of Mg Ion-Implanted GaN as Current Blocking Layer in a CAVET”, Electronic Materials Conference (EMC), Penn State, USA, 2009
  5. Srabanti Chowdhury, Brian L. Swenson, Chang Soo Suh, Yuvaraj Dora, Stacia Keller and Umesh K. Mishra, “AlGaN/GaN HEMT and CAVET for high voltage switching application”, Government Microcircuit Applications and critical technology conference (GOMACTech), Orlando, USA, 2009
  6. Srabanti Chowdhury, Brian L. Swenson, Steven P. DenBaars and Umesh K. Mishra, “AlGaN/GaN CAVET on GaN Substrates with Al Ion Implanted Current Blocking Layer”,, The International Workshop on Nitride Semiconductors (IWN), Montreux, Switzerland, 2008
  7. Srabanti Chowdhury, Brian L. Swenson, Steven P. DenBaars, and Umesh K. Mishra, “Depletion and Enhancement mode AlGaN/GaN CAVET with Al ion implanted current blocking layer”, International Symposium on Compound Semiconductors (ISCS), Rust, Germany, 2008
  8. Srabanti Chowdhury, Brian L. Swenson, Steven P. DenBaars and Umesh K. Mishra, “Depletion and Enhancement mode AlGaN/ GaN CAVET”, Electronic Materials Conference (EMC), Santa Barbara, USA, 2008
  9. Kallol Bhattacharya, Srabanti Chowdhury, Shirsha Bhajan, Dipankar Biswas, and Krishnendu Goswami, “Storage, Transmission and Recognition of alphabets and words with enhanced compression”, International Conference on Computers and Devices for Communication (CODEC), Kolkata, India, 2004
  10. Srabanti Chowdhury, Shirsha Bhajan and D. Biswas, “Unique representation of a binary image through a set of numbers”, Horizons of Telecommunication (HOT), Kolkata, India, 2003

 

Patents

 

 

Issued Patents PAT. NO

Application No. (for filed patents)

Title

Date of Issue or filing (as applicable)

1

2

9,520,491

9,171,730

 

Electrodes for semiconductor devices and methods of forming the same

December 13, 2016

Oct 27, 2015

3

4

9,224,805

 8,901,604

 

Semiconductor devices with guard rings

December 29, 2015

December 2, 2014

5

9,184,275

 

Semiconductor devices with integrated hole collectors

November 10, 2015

6

7

8

9,443,849

9,171,910

8,803,246

 

Semiconductor electronic components with integrated current limiters

September 13, 2016

October 27, 2015

August 12, 2014

 

9

10

9,171,836

8,860,495

 

Method of forming electronic components with increased reliability

October 27, 2015

October 14, 2014

11

12

13

9,437,707

9,147,760

 8,742,460

 

Transistors with isolation region

September 6, 2016

September 29, 2015

June 3, 2014

14

15

9,490,324

9,093,366

 

N-polar III-nitride transistors

November 8, 2016

July 28, 2015

16

8,937,338

 

Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown P-type gallium nitride as a current blocking layer

January 20, 2015

17

8,598,937

 

High power semiconductor electronic components with increased reliability

December 3, 2013

 

18

9,443,93

 

III-nitride transistor including a p-type depleting layer

September 13, 2016

 

19

 

 

9,893,174

 

 

III-nitride based n polar vertical tunnel transistor

2018

20

Application

Publication number: 20170200833

Three dimensional vertically structured MISFET/MESFET

January 7, 2016

21

10,418,475

 

 

Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage

2019

22

10,121,657

 

 

Phosphorus Incorporation for N-Type Doping of Diamond with (100) and Related Surface Orientation

November 8, 2018

 

23

Patent filed, Pending Publication

PCT/US2017/032253

III-nitride Vertical Transistor with Aperture Region Formed Using Ion Implantation as a Path to Achieve Selective Area Doping

May 11, 2017

24

10,418,475

 

 

Diamond Based Current Aperture Vertical Transistor and Methods of Making and Using the Same

November 28, 2017

25

10,043,896

 

 

II-Nitride transistor including a III-N depleting layer

August 7, 2018

22 patents are issued.