Ke Zeng

Dr. Zeng received his Ph.D. and M.S. degree in Electrical Engineering Department of University at Buffalo- SUNY under the guidance of Dr. Uttam Singisetti. His current research is focused on fabricating various high power/performance electronic devices based on GaN and Ga2O3, especially utilizing various novel edge termination techniques and device structures, as well as understanding the fundamental physics underlying these devices.